1/9 october 2001 STP6LNC60 STP6LNC60fp n-channel 600v - 1 w - 5.8a to-220/to-220fp powermesh ? ii mosfet (1)i sd 5.8a, di/dt 100a/ m s, v dd v (br)dss ,t j t jmax. internal schematic diagram n typical r ds (on) = 1.0 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ? . the layout re- finements introduced greatly improve the ron*area figure of merit while keeping the device at the lead- ing edge for what concerns switching speed, gate charge and ruggedness. applications n high current, high speed switching n swith mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drives absolute maximum ratings ( ? )pulse width limited by safe operating area (*) limited only by maximum temperature allowed type v dss r ds(on) i d STP6LNC60 STP6LNC60fp 600 v 600 v < 1.25 w < 1.25 w 5.8 a 5.8 a symbol parameter value unit STP6LNC60 STP6LNC60fp v ds drain-source voltage (v gs =0) 600 v v dgr drain-gate voltage (r gs =20k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuos) at t c =25 c 5.8 5.8 (*) a i d drain current (continuos) at t c = 100 c 3.65 3.65 (*) a i dm ( l ) drain current (pulsed) 23.2 23.2 (*) a p tot total dissipation at t c =25 c 100 35 w derating factor 0.8 0.28 w/ c dv/dt (1) peak diode recovery voltage slope 3 v/ns v iso insulation withstand voltage (dc) - 2500 v t stg storage temperature 65 to 150 c t j max. operating junction temperature to-220 to-220fp 1 2 3
STP6LNC60/STP6LNC60fp 2/9 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic to-220 to-220fp rthj-case thermal resistance junction-case max 1.25 3.53 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 5.8 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 300 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs = 0 600 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1 m a v ds = max rating, t c = 125 c 50 m a i gss gate-body leakage current (v ds =0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10v, i d =3a 1.0 1.25 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d =3a 6s c iss input capacitance v ds = 25v, f = 1 mhz, v gs =0 830 pf c oss output capacitance 120 pf c rss reverse transfer capacitance 15.5 pf
3/9 STP6LNC60/STP6LNC60fp electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d =3a r g = 4.7 w v gs =10v (see test circuit, figure 3) 14.5 ns t r rise time 15.5 ns q g total gate charge v dd = 480v, i d =6a, v gs = 10v 28 39 nc q gs gate-source charge 4.8 nc q gd gate-drain charge 17.5 nc symbol parameter test condit ions min. typ. max. unit t r(voff) off-voltage rise time v dd = 480v, i d =6a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 9ns t f fall time 7.5 ns t c cross-over time 16 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 5.8 a i sdm (2) source-drain current (pulsed) 23.2 a v sd (1) forward on voltage i sd = 6 a, v gs =0 1.6 v t rr reverse recovery time i sd =6 a, di/dt = 100a/ m s v dd = 100v, t j = 150 c (see test circuit, figure 5) 450 ns q rr reverse recovery charge 2.4 m c i rrm reverse recovery current 10.6 a safe operating area for to-220 safe operating area for to-220fp
STP6LNC60/STP6LNC60fp 4/9 transconductance static drain-source on resistance output characteristics thermal impedence for to-220fp thermal impedence for to-220 transfer characteristics
5/9 STP6LNC60/STP6LNC60fp source-drain diode forward characteristics normalized gate thereshold voltage vs temp. normalized on resistance vs temperature gate charge vs gate-source voltage capacitance variations
STP6LNC60/STP6LNC60fp 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/9 STP6LNC60/STP6LNC60fp dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
STP6LNC60/STP6LNC60fp 8/9 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 3 3.2 0.118 0.126 l2 a b d e h g l6 ? f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data
9/9 STP6LNC60/STP6LNC60fp information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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